MODULE CONFIGURATIONS FOR INTEGRATED III-NITRIDE DEVICES

An electronic module for a half-bridge circuit includes a base substrate with an insulating layer between a first metal layer and a second metal layer. A trench formed through the first metal layer electrically isolates first, second, and third portions of the first metal layer from one another. A h...

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Bibliographic Details
Main Authors Yea, Sung Hae, Parikh, Primit, Wu, Yifeng, Rhodes, David Michael
Format Patent
LanguageEnglish
Published 28.09.2023
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Summary:An electronic module for a half-bridge circuit includes a base substrate with an insulating layer between a first metal layer and a second metal layer. A trench formed through the first metal layer electrically isolates first, second, and third portions of the first metal layer from one another. A high-side switch includes an enhancement-mode transistor and a depletion-mode transistor. The depletion-mode transistor includes a III-N material structure on an electrically conductive substrate. A drain electrode of the depletion-mode transistor is connected to the first portion, a source electrode of the enhancement-mode transistor is connected to the second portion, a drain electrode of the enhancement-mode transistor is connected to a source electrode of the depletion-mode transistor, a gate electrode of the depletion-mode transistor is connected to the electrically conductive substrate, and the electrically conductive substrate is connected to the second portion.
Bibliography:Application Number: US202318325829