METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ETCHING GAS

In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, "x" denotes an integer of three or more, and "...

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Bibliographic Details
Main Authors ISHINO, Takaya, SASAKI, Toshiyuki, SHIMIZU, Hisashi, SHIMODA, Mitsuharu
Format Patent
LanguageEnglish
Published 28.09.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, "x" denotes an integer of three or more, and "y" and "z" respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.
Bibliography:Application Number: US202318325640