SEMICONDUCTOR DEVICE INCLUDING STANDARD CELLS WITH COMBINED ACTIVE REGION

A semiconductor device includes a first power rail and a second power rail; a third power rail and a fourth power rail, the fourth power rail aligned with the third power rail in a column direction; a first cell arranged between the first power rail and the second power rail; a second cell arranged...

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Bibliographic Details
Main Authors PRASAD, GURU, GUO, TA-PEN
Format Patent
LanguageEnglish
Published 28.09.2023
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Summary:A semiconductor device includes a first power rail and a second power rail; a third power rail and a fourth power rail, the fourth power rail aligned with the third power rail in a column direction; a first cell arranged between the first power rail and the second power rail; a second cell arranged between the first power rail and the third power rail; and a dummy fin structure extending in the row direction and overlapped with the fourth power rail, wherein the dummy fin structure is configured as a non-functional device. A first active region of the first cell includes a first width in the column direction greater than a second width, in the column direction, of a second active region in the second cell.
Bibliography:Application Number: US202318327037