MEMORY DEVICE

• Main Authors: Choi, Samjong, Kim, Yehwan, Baek, Gayeong, Im, Hwon, Kim, Yeonsook, Kim, Euido, Kim, Cheongjun, Lee, Munkeun
• Format: Patent
• Language: English
• Published: 21.09.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

A memory device includes a substrate, a three-dimensional (3D) NAND memory cell array on the substrate, and a peripheral circuit including a transistor on the substrate. The substrate includes p-type impurities and n-type impurities, a concentration of the n-type impurities in the substrate is lower...