COMBINED SELF-FORMING BARRIER AND SEED LAYER BY ATOMIC LAYER DEPOSITION

• Main Authors: Dordi, Yezdi, Blakeney, Kyle Jordan
• Format: Patent
• Language: English
• Published: 21.09.2023
• Subjects: APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROFORMING; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

An electrically conductive structure in an integrated circuit (IC) includes recessed features in a dielectric layer filled with metal. The recessed features include a conformal, self-forming diffusion barrier and seed layer to limit oxidation of the metal into ions that will diffuse through the dielectric. The self-forming diffusion barrier and seed layer may also form a surface oxide layer that can be removed by an acidic solution