MEMORY AND READING METHOD THEREOF

A memory, including a selected memory cell block and a first sense amplifying device, is provided. The selected memory cell block and the first sense amplifying device are both coupled to a first global bit line. The first sense amplifying device is configured to: in a leakage current detection mode...

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Bibliographic Details
Main Author Ho, Wen-Chiao
Format Patent
LanguageEnglish
Published 14.09.2023
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

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