DEEP NWELL CONTACT STRUCTURES

Integrated structures include (among other components) a deep well structure having a first impurity, well rows contacting the deep well structure and having a second impurity, a well contact ring enclosing the well rows within an enclosed area, a transistor layer on the well rows, transistors withi...

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Bibliographic Details
Main Authors Jain, Navneet K, Rashed, Mahbub
Format Patent
LanguageEnglish
Published 07.09.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Integrated structures include (among other components) a deep well structure having a first impurity, well rows contacting the deep well structure and having a second impurity, a well contact ring enclosing the well rows within an enclosed area, a transistor layer on the well rows, transistors within the transistor layer, and at least one ring-enclosed contact contacting the deep well structure. The ring-enclosed contact is positioned within the enclosed area. Such structures further include a well contact connection contacting the well contact ring and the ring-enclosed contact.
Bibliography:Application Number: US202217687941