ULTRA-LOW LEAKAGE DIODES USED FOR LOW INPUT BIAS CURRENT

In an example, a device includes a semiconductor substrate having a top surface. The device also includes a P-doped well formed in the semiconductor substrate and extending downwardly from the top surface. The device includes a cathode of a diode formed by an N-doped region in the P-doped well. The...

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Main Authors VASAN, Bharath Karthik, SUDANI, Siva Kumar, WANG, YuGuo, DOORENBOS, Jerry L, PULIJALA, Srinivas Kumar
Format Patent
LanguageEnglish
Published 31.08.2023
Subjects
AMPLIFIERS
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
GENERATION
SEMICONDUCTOR DEVICES
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Summary:In an example, a device includes a semiconductor substrate having a top surface. The device also includes a P-doped well formed in the semiconductor substrate and extending downwardly from the top surface. The device includes a cathode of a diode formed by an N-doped region in the P-doped well. The device also includes an anode of the diode formed by a P-doped region, the P-doped region spaced away from the N-doped region in the P-doped well. The device includes a deep N-type buried layer (DNBL) formed in the semiconductor substrate, the P-doped well formed between the top surface and the DNBL. The device also includes an N-doped well extending from the top surface to the DNBL.
Bibliography:Application Number: US202217681664