RING TRANSISTOR STRUCTURE

The present disclosure relates to a transistor device. The transistor device includes a plurality of source contacts disposed over a substrate. A plurality of gate structures are disposed over the substrate. The plurality of gate structures wrap around one or more of the plurality of source contacts...

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Bibliographic Details
Main Authors Brun, Aurelien Gauthier, Tsai, Chun Lin, Yu, Jiun-Lei Jerry, Chen, Po-Chih, Wang, Yun-Hsiang
Format Patent
LanguageEnglish
Published 17.08.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present disclosure relates to a transistor device. The transistor device includes a plurality of source contacts disposed over a substrate. A plurality of gate structures are disposed over the substrate. The plurality of gate structures wrap around one or more of the plurality of source contacts in one or more closed loops. A drain contact is disposed over the substrate. The drain contact continuously wraps around one or more of the plurality of gate structures as a continuous structure. The plurality of gate structures are separated from the drain contact by a first distance and are separated from a source contact of the plurality of source contacts by a second distance. The second distance is different than the first distance.
Bibliography:Application Number: US202318302174