LATERAL MULTI-BIT MEMORY DEVICES AND METHODS OF MAKING THE SAME

• Main Authors: TAN, SHYUE SENG, TOH, ENG HUAT, LOY, DESMOND JIA JUN
• Format: Patent
• Language: English
• Published: 10.08.2023

The disclosed subject matter relates generally to structures, memory devices and methods of forming the same. More particularly, the present disclosure relates to resistive random-access (ReRAM) memory devices having two resistive layers and a conductive layer arranged between two electrodes. The present disclosure provides a memory device including a first electrode above an interlayer dielectric region, a second electrode above the interlayer dielectric region, the second electrode is laterally adjacent to the first electrode, a conductive layer between the first electrode and the second electrode, in which the conductive layer is electrically isolated, a first resistive layer between the first electrode and the conductive layer, and a second resistive layer between the second electrode and the conductive layer.