SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

A semiconductor device including transistors on a substrate, a first interlayer insulating layer on the transistors, a first lower interconnection line and a second lower interconnection line in an upper portion of the first interlayer insulating layer, a dielectric layer being selectively on a top...

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Bibliographic Details
Main Authors LEE, Eui Bok, Kim, Wandon, Yoo, Donggon
Format Patent
LanguageEnglish
Published 10.08.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device including transistors on a substrate, a first interlayer insulating layer on the transistors, a first lower interconnection line and a second lower interconnection line in an upper portion of the first interlayer insulating layer, a dielectric layer being selectively on a top surface of the first interlayer insulating layer except top surfaces of the first and second lower interconnection lines, an etch stop layer on the first and second lower interconnection lines and the dielectric layer, a second interlayer insulating layer on the etch stop layer, and an upper interconnection line in the second interlayer insulating layer may be provided.
Bibliography:Application Number: US202318299926