SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

A semiconductor structure including a substrate and a deep trench isolation structure is provided. The deep trench isolation structure is disposed in the substrate and is not electrically connected to any device. The deep trench isolation structure includes a heat dissipation layer and a dielectric...

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Bibliographic Details
Main Authors Liao, Hung-Kwei, Liu, Chen-Chiang
Format Patent
LanguageEnglish
Published 27.07.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure including a substrate and a deep trench isolation structure is provided. The deep trench isolation structure is disposed in the substrate and is not electrically connected to any device. The deep trench isolation structure includes a heat dissipation layer and a dielectric liner layer. The heat dissipation layer is disposed in the substrate. The dielectric liner layer is disposed between the heat dissipation layer and the substrate.
Bibliography:Application Number: US202217687663