METAL HETEROJUNCTION STRUCTURE WITH CAPPING METAL LAYER

• Main Authors: HSU, Chun-Wei, HONG, William Weilun, SHEN, Chi-Hsiang, CHEN, Liang-Guang, HO, Chia-Wei, CHENG, Yang-Chun, KUNG, Te-Ming, LIN, Yi-Sheng, LIU, Chi-Jen, CHEN, Kei-Wei
• Format: Patent
• Language: English
• Published: 20.07.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.