METAL HETEROJUNCTION STRUCTURE WITH CAPPING METAL LAYER

The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a reces...

Full description

Saved in:
Bibliographic Details
Main Authors HSU, Chun-Wei, HONG, William Weilun, SHEN, Chi-Hsiang, CHEN, Liang-Guang, HO, Chia-Wei, CHENG, Yang-Chun, KUNG, Te-Ming, LIN, Yi-Sheng, LIU, Chi-Jen, CHEN, Kei-Wei
Format Patent
LanguageEnglish
Published 20.07.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.
Bibliography:Application Number: US202318184438