SEMICONDUCTOR DEVICE

In a first vertical field-effect transistor in which first source regions and first connectors each of which electrically connects a first body region and a first source electrode are alternately and periodically disposed in a first direction (Y direction) in which a first trench extends, a ratio of...

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Bibliographic Details
Main Authors OOTA, Tomonari, NAKAMURA, Hironao, TAGUCHI, Masahide, NAKAYAMA, Yusuke
Format Patent
LanguageEnglish
Published 13.07.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a first vertical field-effect transistor in which first source regions and first connectors each of which electrically connects a first body region and a first source electrode are alternately and periodically disposed in a first direction (Y direction) in which a first trench extends, a ratio of LS [μm] to LB [μm] is at least 1/7 and at most 1/3, where LS denotes a length of one of the first source regions in the first direction, and LB denotes a length of one of the first connectors in the first direction, and LB≤−0.024×(VGS)2+0.633×VGS−0.721 is satisfied for a voltage VGS [V] of a specification value of a semiconductor device, the voltage VGS being applied to a first gate conductor with reference to an electric potential of the first source electrode.
Bibliography:Application Number: US202318175196