3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH OXIDE BONDING

A semiconductor device, the device including: a first silicon layer including first single crystal silicon; an isolation layer disposed over the first silicon layer; a first metal layer disposed over the isolation layer; a second metal layer disposed over the first metal layer; a first level includi...

Full description

Saved in:
Bibliographic Details
Main Author Or-Bach, Zvi
Format Patent
LanguageEnglish
Published 13.07.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor device, the device including: a first silicon layer including first single crystal silicon; an isolation layer disposed over the first silicon layer; a first metal layer disposed over the isolation layer; a second metal layer disposed over the first metal layer; a first level including a plurality of transistors, the first level disposed over the second metal layer, where the isolation layer includes an oxide to oxide bond surface, where the plurality of transistors include a second single crystal silicon region; and a third metal layer disposed over the first level, where a typical first thickness of the third metal layer is at least 50% greater than a typical second thickness of the second metal layer.
Bibliography:Application Number: US202318125053