SEMICONDUCTOR DEVICE METHOD FOR FORMING THE SAME
A semiconductor device is provided. The semiconductor device includes a substrate, a fin structure and an epitaxial source/drain structure. The substrate includes a substrate layer and an insulator layer on the substrate layer. The fin structure is formed over the substrate, wherein the fin structur...
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| Main Authors | , |
|---|---|
| Format | Patent |
| Language | English |
| Published |
13.07.2023
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A semiconductor device is provided. The semiconductor device includes a substrate, a fin structure and an epitaxial source/drain structure. The substrate includes a substrate layer and an insulator layer on the substrate layer. The fin structure is formed over the substrate, wherein the fin structure includes a gate structure and channel layers wrapped by the gate structure. The epitaxial source/drain structure is connected to the channel layers, wherein a bottom portion of the epitaxial source/drain structure is in contact with the insulator layer of the substrate. |
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| AbstractList | A semiconductor device is provided. The semiconductor device includes a substrate, a fin structure and an epitaxial source/drain structure. The substrate includes a substrate layer and an insulator layer on the substrate layer. The fin structure is formed over the substrate, wherein the fin structure includes a gate structure and channel layers wrapped by the gate structure. The epitaxial source/drain structure is connected to the channel layers, wherein a bottom portion of the epitaxial source/drain structure is in contact with the insulator layer of the substrate. |
| Author | TSAO, Po-Chao LIN, Hsien-Hsin |
| Author_xml | – fullname: LIN, Hsien-Hsin – fullname: TSAO, Po-Chao |
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| Notes | Application Number: US202218064431 |
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| Snippet | A semiconductor device is provided. The semiconductor device includes a substrate, a fin structure and an epitaxial source/drain structure. The substrate... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | SEMICONDUCTOR DEVICE METHOD FOR FORMING THE SAME |
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