SEMICONDUCTOR DEVICE METHOD FOR FORMING THE SAME

A semiconductor device is provided. The semiconductor device includes a substrate, a fin structure and an epitaxial source/drain structure. The substrate includes a substrate layer and an insulator layer on the substrate layer. The fin structure is formed over the substrate, wherein the fin structur...

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Bibliographic Details
Main Authors LIN, Hsien-Hsin, TSAO, Po-Chao
Format Patent
LanguageEnglish
Published 13.07.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device is provided. The semiconductor device includes a substrate, a fin structure and an epitaxial source/drain structure. The substrate includes a substrate layer and an insulator layer on the substrate layer. The fin structure is formed over the substrate, wherein the fin structure includes a gate structure and channel layers wrapped by the gate structure. The epitaxial source/drain structure is connected to the channel layers, wherein a bottom portion of the epitaxial source/drain structure is in contact with the insulator layer of the substrate.
Bibliography:Application Number: US202218064431