Arcing Reduction in Wafer Bevel Edge Plasma Processing

Methods and systems for processing a bevel edge of a wafer in a bevel plasma chamber. The method includes receiving a pulsed mode setting for a RF generator of the bevel plasma chamber. The method includes identifying a duty cycle for the pulsed mode, the duty cycle defining an ON time and an OFF ti...

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Bibliographic Details
Main Authors Chen, Jack, Hua, Xuefeng, Luo, Wei Yi
Format Patent
LanguageEnglish
Published 06.07.2023
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Summary:Methods and systems for processing a bevel edge of a wafer in a bevel plasma chamber. The method includes receiving a pulsed mode setting for a RF generator of the bevel plasma chamber. The method includes identifying a duty cycle for the pulsed mode, the duty cycle defining an ON time and an OFF time during each cycle of power delivered by the generator. The method includes calculating or accessing a compensation factor to an input RF power setting of the generator. The compensation factor is configured to add an incremental amount of power to the input power setting to account for a loss in power attributed to the duty cycle to be run in the pulsed mode. The method is configured to run the generator in the pulse mode with the duty cycle and the pulsing frequency. The generator is configured to generate the input power in pulsing mode that includes incremental amount of power to achieve an effective power in the bevel plasma chamber to achieve a target bevel processing throughput, while reducing charge build-up that causes arcing damage.
Bibliography:Application Number: US202118010760