ULTRA-DENSE THREE-DIMENSIONAL TRANSISTOR DESIGN

A semiconductor device includes a substrate, a first wiring layer over the substrate, and a first array of transistor pairs extending over the first wiring layer. Cross sections of each transistor pair cut through the first array. The cross sections of each transistor pair have a similar structure....

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Bibliographic Details
Main Authors FULFORD, H. Jim, GARDNER, Mark I, MUKHOPADHYAY, Partha
Format Patent
LanguageEnglish
Published 29.06.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a substrate, a first wiring layer over the substrate, and a first array of transistor pairs extending over the first wiring layer. Cross sections of each transistor pair cut through the first array. The cross sections of each transistor pair have a similar structure. Each transistor pair includes a mandrel having two opposite sidewalls that are perpendicular to the substrate and extending along a direction of the first array of transistor pairs. Each transistor pair includes two transistors symmetrically disposed over the two opposite sidewalls of the respective mandrel.
Bibliography:Application Number: US202217952552