SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND PLASMA GENERATING METHOD

Provided is a substrate processing apparatus. The substrate processing apparatus may include a chamber having an inner space, an electrode configured to generate plasma in the inner space, and a power supply unit configured to apply an RF voltage to the electrode, in which the power supply unit may...

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Bibliographic Details
Main Authors Galstyan, Ogsen, Gu, Ja Myung, ARAKELYAN, Shant
Format Patent
LanguageEnglish
Published 29.06.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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Summary:Provided is a substrate processing apparatus. The substrate processing apparatus may include a chamber having an inner space, an electrode configured to generate plasma in the inner space, and a power supply unit configured to apply an RF voltage to the electrode, in which the power supply unit may include a first power supply configured to apply a first pulse voltage having a first frequency to the electrode, a second power supply configured to apply a second pulse voltage having a second frequency different from the first frequency to the electrode, a third power supply configured to apply an RF voltage having a third frequency different from the first frequency and the second frequency, and a phase control member for controlling at least one of the phases of the first pulse voltage and the second pulse voltage.
Bibliography:Application Number: US202218145413