INTEGRATED CIRCUIT WITH THICKER METAL LINES ON LOWER METALLIZATION LAYER

An IC structure includes first, second, third, and fourth transistors on a substrate, a first net and a second net. The first net includes a plurality of first metal lines routed on a first metallization layer, and a plurality of first metal vias electrically connecting the plurality of first metal...

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Bibliographic Details
Main Authors HOU, Yuan-Te, HOU, Yung-Chin, CHANG, Kuang-Hung, WANG, Chung-Hsing
Format Patent
LanguageEnglish
Published 29.06.2023
Subjects
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:An IC structure includes first, second, third, and fourth transistors on a substrate, a first net and a second net. The first net includes a plurality of first metal lines routed on a first metallization layer, and a plurality of first metal vias electrically connecting the plurality of first metal lines to the first and second transistors. The second net includes a plurality of second metal lines routed on a second metallization layer, and a plurality of second metal vias electrically connecting the plurality of second metal lines to the third and fourth transistors. A count of the first metal vias of the first net is less than a count of the second metal vias of the second net, and a line height of the first metal line of the first net is greater than a line height of the second metal line of the second net.
Bibliography:Application Number: US202318173731