ELECTRON-PHOTON BARRIER IN PHOTODETECTORS

A dual band photodetector includes a first band absorber layer is configured to absorb incident light in a first wavelength spectral band and a second band absorber layer configured to absorb incident light in a second wavelength spectral band. The dual band photodetector further includes an electro...

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Bibliographic Details
Main Authors Huang, Edward K, Onat, Bora
Format Patent
LanguageEnglish
Published 22.06.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A dual band photodetector includes a first band absorber layer is configured to absorb incident light in a first wavelength spectral band and a second band absorber layer configured to absorb incident light in a second wavelength spectral band. The dual band photodetector further includes an electron-photon blocking (EPB) layer located between the respective layers and includes at least one high band gap layer and at least one intervening layer. The difference in refractive index between the at least one high band gap layer and the at least one intervening layer form a distributed brag reflector (DBR) designed to reflect wavelengths corresponding with radiative recombination photons emitted from at least the first absorber layer to reduce optical crosstalk between the first band absorber layer and the second band absorber layer.
Bibliography:Application Number: US202117553212