METHOD FOR PREPARING SEMICONDUCTOR DEVICE STRUCTURE WITH BOTTOM CAPACITOR ELECTRODE HAVING CROWN-SHAPED STRUCTURE AND INTERCONNECT PORTION
The present disclosure provides a method for preparing a semiconductor device structure. The method includes forming a capacitor contact over a semiconductor substrate, and forming a base layer over the capacitor contact. The method also includes forming a dielectric layer over the base layer, and p...
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Main Author | |
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Format | Patent |
Language | English |
Published |
22.06.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The present disclosure provides a method for preparing a semiconductor device structure. The method includes forming a capacitor contact over a semiconductor substrate, and forming a base layer over the capacitor contact. The method also includes forming a dielectric layer over the base layer, and performing a first doping process to form a first doped region in the dielectric layer. The method further includes etching the dielectric layer such that a sidewall of the dielectric layer is aligned with a sidewall of the first doped region, and removing the first doped region to form a first gap structure in the dielectric layer after the dielectric layer is etched. In addition, the method includes forming a surrounding portion along sidewalls of the dielectric layer and a first interconnect portion in the first gap structure by a deposition process. |
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Bibliography: | Application Number: US202318108755 |