METHOD FOR PREPARING SEMICONDUCTOR DEVICE STRUCTURE WITH BOTTOM CAPACITOR ELECTRODE HAVING CROWN-SHAPED STRUCTURE AND INTERCONNECT PORTION

• Main Author: TSAI, HUNGI
• Format: Patent
• Language: English
• Published: 22.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure provides a method for preparing a semiconductor device structure. The method includes forming a capacitor contact over a semiconductor substrate, and forming a base layer over the capacitor contact. The method also includes forming a dielectric layer over the base layer, and performing a first doping process to form a first doped region in the dielectric layer. The method further includes etching the dielectric layer such that a sidewall of the dielectric layer is aligned with a sidewall of the first doped region, and removing the first doped region to form a first gap structure in the dielectric layer after the dielectric layer is etched. In addition, the method includes forming a surrounding portion along sidewalls of the dielectric layer and a first interconnect portion in the first gap structure by a deposition process.