PLASMA CONTROL APPARATUS AND PLASMA PROCESSING SYSTEM

• Main Authors: Kim, Sungyeol, Lee, Kyungmin, Lim, Seungkyu, Choi, Jaehyun, Jung, Myungsub, Lim, Sungyong
• Format: Patent
• Language: English
• Published: 15.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

a plasma processing system includes a chamber providing a space for performing a plasma process on a substrate, a substrate stage having a seating surface for supporting the substrate, the substrate stage having a circular electrode and at least one annular electrode therein, an upper electrode provided over the substrate, a power supply configured to supply source power to the upper electrode, a first capacitance variator configured to vary a capacitance of the circular electrode based on an inputted first control signal, a second capacitance variator configured to vary a capacitance of the annular electrode based on an inputted second control signal, a sensor connected to the first and second capacitance variators respectively and configured to acquire electrical signal data of the circular electrode and the at least one annular electrode, and a controller configured to determine a thin film profile in first and second regions of the substrate corresponding to the circular electrode and the annular electrode respectively based on the electrical signal data obtained from the sensor, the controller being configured to output the first and second control signals respectively in order to obtain a desired thin film profile.