PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

A plasma processing apparatus including: a processing chamber in which a sample is plasma-processed; a radio frequency power supply configured to supply a radio frequency power for generating plasma; a first radio frequency power supply ; a second radio frequency power supply configured to supply, a...

Full description

Saved in:
Bibliographic Details
Main Authors Tokunaga, Takayuki, Morimoto, Michikazu, Jomura, Mitsuhiro
Format Patent
LanguageEnglish
Published 15.06.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A plasma processing apparatus including: a processing chamber in which a sample is plasma-processed; a radio frequency power supply configured to supply a radio frequency power for generating plasma; a first radio frequency power supply ; a second radio frequency power supply configured to supply, a second radio frequency power having a frequency higher than a frequency of the first radio frequency power supplied; and a control device configured to control the first radio frequency power supply and the second radio frequency power supply such that the supply of one radio frequency power is stopped while the other radio frequency power is supplied, in which the frequency of the first radio frequency power and the frequency of the second radio frequency power are defined based on a full width at half maximum of a peak value of an ion energy distribution with respect to the frequency.
Bibliography:Application Number: US202017435147