Method of forming thin film, method of forming thin film structure, method of manufacturing capacitor, capacitor and memory device including the same

• Main Authors: Jeon, Woojin, Lee, Min Yung, Kim, Yewon
• Format: Patent
• Language: English
• Published: 08.06.2023
• Subjects: ELECTRICITY

A method for forming a thin film structure may include providing a TiN member, forming a MoO2 thin film on the TiN member by using a first ALD (atomic layer deposition) process using ozone (O3) as a reactant, and forming a TiO2 thin film having a rutile crystal structure on the MoO2 thin film by using a second ALD process. The MoO2 thin film may have a thickness of about 10 nm or less. A TiO2 element layer may be further formed between the TiN member and the MoO2 thin film. The TiO2 element layer may have a nanodot array shape or a continuous layer structure. The TiO2 thin film may have a dielectric constant of 100 or more. The method of manufacturing a capacitor may further include forming a conductive material layer on the TiO2 thin film.