SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

A semiconductor memory device includes a substrate including an active area defined by an element separation layer, the active area including a first portion and second portions defined on both sides of the first portion a bit line crossing the active area and extending in a first direction on the s...

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Bibliographic Details
Main Authors KIM, Jong Hyeok, KIM, BEOM SEO, KIM, Sung Gil, KOO, Ja Min, GU, Bo Ram
Format Patent
LanguageEnglish
Published 08.06.2023
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A semiconductor memory device includes a substrate including an active area defined by an element separation layer, the active area including a first portion and second portions defined on both sides of the first portion a bit line crossing the active area and extending in a first direction on the substrate, and a bit line contact disposed between the substrate and the bit line and directly connected to the first portion of the active area. The bit line contact includes an indent area recessed into the substrate and an upper area on the indent area, a width of the indent area decreases as a distance from the bit line increases, the indent area includes a slope forming a boundary with the substrate and having a straight line shape, and a starting point of the slope of the indent area is lower than an upper surface of the element separation layer.
Bibliography:Application Number: US202217933363