BURIED POWER RAIL AT TIGHT CELL-TO-CELL SPACE

A semiconductor device includes a first buried power rail (BPR) disposed through etch stop layers and a second BPR disposed in direct contact with the first BPR, where the first BPR has a larger critical dimension (CD) than the second BPR. A bottom surface of the first BPR directly contacts a via-to...

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Bibliographic Details
Main Authors Petrarca, Kevin Shawn, GHOSH, SOMNATH, Choi, Kisik, Sieg, Stuart, Xie, Ruilong
Format Patent
LanguageEnglish
Published 08.06.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a first buried power rail (BPR) disposed through etch stop layers and a second BPR disposed in direct contact with the first BPR, where the first BPR has a larger critical dimension (CD) than the second BPR. A bottom surface of the first BPR directly contacts a via-to buried power rail (VBPR) contact. Source/drain contacts (CA) are disposed adjacent the VBPR contact and source/drain regions collectively defining middle-of-line (MOL) components. Back-end-of-line (BEOL) components are then constructed adjacent to the MOL components, and the MOL and BEOL components bond to a carrier wafer. The second BPR is then constructed on the carrier wafer.
Bibliography:Application Number: US202117545073