IN-PLANE MAGNETIZED FILM MULTILAYER STRUCTURE, HARD BIAS LAYER, AND MAGNETORESISTIVE EFFECT ELEMENT

An in-plane magnetized film multilayer structure for use as a hard bias layer of a magnetoresistive effect element contains a plurality of in-plane magnetized films and a nonmagnetic intermediate layer. The nonmagnetic intermediate layer is disposed between the in-plane magnetized films, and the in-...

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Bibliographic Details
Main Authors THAM, Kim Kong, KAMADA, Tomonari, KUSHIBIKI, Ryousuke
Format Patent
LanguageEnglish
Published 01.06.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRICITY
INDUCTANCES
MAGNETS
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
TESTING
TRANSFORMERS
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Summary:An in-plane magnetized film multilayer structure for use as a hard bias layer of a magnetoresistive effect element contains a plurality of in-plane magnetized films and a nonmagnetic intermediate layer. The nonmagnetic intermediate layer is disposed between the in-plane magnetized films, and the in-plane magnetized films adjacent across the nonmagnetic intermediate layer are coupled by a ferromagnetic coupling. Each of the in-plane magnetized films contains metal Co and metal Pt, and contains the metal Co in an amount of 45 at % or more and 80 at % or less and the metal Pt in an amount of 20 at % or more and 55 at % or less relative to a total of metal components of the each of the in-plane magnetized films. A total thickness of the plurality of in-plane magnetized films is 30 nm or more.
Bibliography:Application Number: US202117921005