COMPOSITE MATERIAL, HEAT SINK AND SEMICONDUCTOR DEVICE

A composite material of the present disclosure contains a plurality of diamond particles, copper, and at least one first element selected from the group consisting of silicon, chromium, cobalt, nickel, molybdenum, titanium, vanadium, niobium, tantalum tungsten and aluminum, wherein the content rate...

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Bibliographic Details
Main Authors MAJIMA, Masatoshi, TAKASHIMA, Kouichi, TOYOSHIMA, Gouhei
Format Patent
LanguageEnglish
Published 01.06.2023
Subjects
ALLOYS
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
FERROUS OR NON-FERROUS ALLOYS
METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
SEMICONDUCTOR DEVICES
TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Summary:A composite material of the present disclosure contains a plurality of diamond particles, copper, and at least one first element selected from the group consisting of silicon, chromium, cobalt, nickel, molybdenum, titanium, vanadium, niobium, tantalum tungsten and aluminum, wherein the content rate of the first element based on the total mass of the copper and the first element is 50 ppm or higher and 2,000 ppm or lower.
Bibliography:Application Number: US202117917006