APPLYING INERT ION BEAM ETCHING FOR IMPROVING A PROFILE AND REPAIRING SIDEWALL DAMAGE FOR PHASE CHANGE MEMORY DEVICES

A process of improving a profile and repairing sidewall damage for phase change memory devices. The process includes applying inert ion beam etching to trim a sidewall of a layer of phase change memory material in a phase change memory device, where the sidewall has been damaged in reactive ion etch...

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Bibliographic Details
Main Authors Gignac, Lynne Marie, Suwannasiri, Thitima, ENGELMANN, SEBASTIAN Ulrich, Buzi, Luxherta, BRUCE, ROBERT L
Format Patent
LanguageEnglish
Published 25.05.2023
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Summary:A process of improving a profile and repairing sidewall damage for phase change memory devices. The process includes applying inert ion beam etching to trim a sidewall of a layer of phase change memory material in a phase change memory device, where the sidewall has been damaged in reactive ion etching using halogens. In the process, the inert ion beam etching is with low energy. In the process, applying the inert ion beam etching to trim the sidewall is at a predetermined low temperature. In the process, applying the inert ion beam etching to trim the sidewall is at a predetermined small angle between an inert ion beam and a surface tangent of the sidewall.
Bibliography:Application Number: US202117456402