DUAL RESISTOR INTEGRATION
An electronic device includes a first thin film resistor and a second thin film resistor above a dielectric layer that extends in a first plane of orthogonal first and second directions, the first resistor has three portions with the second portion extending between the first and third portions, and...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
18.05.2023
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Subjects | |
Online Access | Get full text |
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Summary: | An electronic device includes a first thin film resistor and a second thin film resistor above a dielectric layer that extends in a first plane of orthogonal first and second directions, the first resistor has three portions with the second portion extending between the first and third portions, and a recess etched into the top side of the second portion by a controlled etch process to increase the sheet resistance of the first resistor for dual thin film resistor integration. |
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Bibliography: | Application Number: US202117525167 |