MEMORY DEVICE FOR DETECTING FAIL CELL AND OPERATION METHOD THEREOF

An operation method of a memory device for programming memory cells to a plurality of program states includes providing a series of program pulses to selected memory cells, performing a first verification operation of verifying a target program state among the plurality of program states, performing...

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Bibliographic Details
Main Authors Jung, Wontaeck, Kim, Nayeon, Seo, Jiwon, Hyun, Seungyong, Park, Jooyong
Format Patent
LanguageEnglish
Published 11.05.2023
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:An operation method of a memory device for programming memory cells to a plurality of program states includes providing a series of program pulses to selected memory cells, performing a first verification operation of verifying a target program state among the plurality of program states, performing, when the first verification operation is passed, a second verification operation of detecting fail cells among the selected memory cells to determine if these memory cells have been overprogrammed. When the number of detected fail cells is greater than or equal to a reference value, the program operation may be terminated for that location and the data may be written to another location.
Bibliography:Application Number: US202217982550