SEMICONDUCTOR ELEMENT AND MULTIPLEXER INCLUDING A PLURALITY OF SEMICONDUCTOR ELEMENTS

According to various example embodiments, a semiconductor element includes: a channel layer including a semiconductor material; a p-type semiconductor layer and an n-type semiconductor layer apart from each other with the channel layer therebetween, a paraelectric layer on a first area of the channe...

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Bibliographic Details
Main Authors HEO, Jinseong, BAE, Hagyoul, NAM, Seunggeol
Format Patent
LanguageEnglish
Published 11.05.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to various example embodiments, a semiconductor element includes: a channel layer including a semiconductor material; a p-type semiconductor layer and an n-type semiconductor layer apart from each other with the channel layer therebetween, a paraelectric layer on a first area of the channel layer, a ferroelectric layer on a second area different from the first area of the channel area, and having a polarization state due to a voltage applied from an external source, a first gate electrode on the paraelectric layer, a second gate electrode on the ferroelectric layer, and an insulating layer between the first gate electrode and the second gate electrode, and electrically separating the first gate electrode and the second gate electrode from each other.
Bibliography:Application Number: US202217983856