PREPARATION METHOD FOR LEADS OF SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR STRUCTURE

The present application relates to a preparation method for leads of semiconductor structure and semiconductor structure. The preparation method comprises: providing a substrate covered with a conductive layer, the substrate having a first region and a second region being connected with the first re...

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Bibliographic Details
Main Author Chou, Chung Yen
Format Patent
LanguageEnglish
Published 11.05.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present application relates to a preparation method for leads of semiconductor structure and semiconductor structure. The preparation method comprises: providing a substrate covered with a conductive layer, the substrate having a first region and a second region being connected with the first region at side surfaces; sequentially forming, on the conductive layer, a second dielectric layer, a first dielectric layer and a mask layer which are superposed one upon the other; etching the second dielectric layer for the first time; removing the mask layer in the first region; etching the second dielectric layer for the second time, forming, respectively in the first region and the second region, a first window and a second window; and etching the exposed conductive layer, forming leads comprising wide lines in the first region and narrow lines in the second region.
Bibliography:Application Number: US202117433348