PRE-FLOW OF P-TYPE DOPANT PRECURSOR TO ENABLE THINNER P-GAN LAYERS IN GALLIUM NITRIDE-BASED TRANSISTORS

• Main Authors: McNerney, Gregory P, Rode, Johann C, Minutillo, Nicholas, Tanaka, Atsunori, Beumer, Michael S, Ehlert, Robert, Bajaj, Sanyam, Vishwanath, Suresh, Wallace, Patrick M
• Format: Patent
• Language: English
• Published: 04.05.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In one embodiment, a transistor is formed by a process comprising forming a buffer layer on a substrate, the buffer layer comprising a first group III-nitride (III-N) material (e.g., AlGaN), forming a channel layer on the buffer layer, the channel layer comprising a second III-N material (e.g., GaN)...