PRE-FLOW OF P-TYPE DOPANT PRECURSOR TO ENABLE THINNER P-GAN LAYERS IN GALLIUM NITRIDE-BASED TRANSISTORS

• Main Authors: McNerney, Gregory P, Rode, Johann C, Minutillo, Nicholas, Tanaka, Atsunori, Beumer, Michael S, Ehlert, Robert, Bajaj, Sanyam, Vishwanath, Suresh, Wallace, Patrick M
• Format: Patent
• Language: English
• Published: 04.05.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In one embodiment, a transistor is formed by a process comprising forming a buffer layer on a substrate, the buffer layer comprising a first group III-nitride (III-N) material (e.g., AlGaN), forming a channel layer on the buffer layer, the channel layer comprising a second III-N material (e.g., GaN), forming a polarization layer on the channel layer, the polarization layer comprising a third III-N material (e.g., AlGaN), flowing a p-type dopant precursor compound (e.g., Cp2Mg) after forming the polarization layer, forming a p-type doped layer (e.g., p-GaN) on the polarization layer, the p-type doped layer comprising a p-type dopant (e.g., Mg) and a fourth III-N material (e.g., GaN), forming a source region adjacent one end of the channel layer, and forming a drain region adjacent another end of the channel layer.