HIGH ELECTRON MOBILITY TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF

A high electron mobility transistor (HEMT) device including a substrate, a channel layer, a barrier layer, a p-type gallium nitride (GaN) spacer, a gate electrode, a source electrode, and a drain electrode is provided. The channel layer is disposed on the substrate. The barrier layer is disposed on...

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Bibliographic Details
Main Authors Lo, Ta Kang, Lee, Hao-Ming, Hsieh, Shou-Wei, Chen, Tsai-Fu
Format Patent
LanguageEnglish
Published 27.04.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A high electron mobility transistor (HEMT) device including a substrate, a channel layer, a barrier layer, a p-type gallium nitride (GaN) spacer, a gate electrode, a source electrode, and a drain electrode is provided. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer and has a protruding portion. The P-type GaN spacer is disposed on a side wall of the protruding portion. The gate electrode is disposed on the protruding portion and the P-type GaN spacer. The source electrode and the drain electrode are disposed on two sides of the gate electrode.
Bibliography:Application Number: US202117528159