SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR
A power module includes an insulating substrate, a heat dissipation member, and an electrode plate. An IGBT and a diode are mounted on the insulating substrate. The heat dissipation member is bonded to the insulating substrate by first solder. The electrode plate is disposed so as to overlap at leas...
Saved in:
Main Authors | , , , , |
---|---|
Format | Patent |
Language | English |
Published |
20.04.2023
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A power module includes an insulating substrate, a heat dissipation member, and an electrode plate. An IGBT and a diode are mounted on the insulating substrate. The heat dissipation member is bonded to the insulating substrate by first solder. The electrode plate is disposed so as to overlap at least a part of the semiconductor element. The main surface of the insulating substrate is curved so as to have a shape convex toward the heat dissipation member. The first solder is thicker at the edges than at the center in a plan view. The semiconductor element is bonded to the electrode plate by second solder. |
---|---|
Bibliography: | Application Number: US202117798100 |