BUFFER LAYER ON SILICON CARBIDE SUBSTRATE, AND METHOD FOR FORMING BUFFER LAYER

A buffer layer on a silicon carbide substrate and a method of forming the same are disclosed. The buffer layer includes at least two layers of silicon carbide films, in which at least each lower one is doped at a top surface thereof with predetermined ions. As a result, at the top surface of the sil...

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Bibliographic Details
Main Authors LI, Xiang, CONG, Maojie, XIE, Zhiping, KAN, Zhiguo, LIU, Xuanjie
Format Patent
LanguageEnglish
Published 20.04.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A buffer layer on a silicon carbide substrate and a method of forming the same are disclosed. The buffer layer includes at least two layers of silicon carbide films, in which at least each lower one is doped at a top surface thereof with predetermined ions. As a result, at the top surface of the silicon carbide film, a barrier with different parameter is formed, which can block dislocation defects that have spread into the silicon carbide film from further upward propagation in the silicon carbide film.
Bibliography:Application Number: US202217911597