METHOD OF MANUFACTURING BULK ACOUSTIC WAVE DEVICE WITH ATOMIC LAYER DEPOSITION OF PIEZOELECTRIC LAYER

Aspects of this disclosure relate to method of manufacturing a bulk acoustic wave device. The method can include providing a bulk acoustic wave device structure including a first piezoelectric layer and forming a second piezoelectric layer over the first piezoelectric layer by atomic layer depositio...

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Bibliographic Details
Main Authors Shin, Kwang Jae, Shirakawa, Alexandre Augusto, Bader, Stefan, Cheng, Kezia
Format Patent
LanguageEnglish
Published 06.04.2023
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
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Summary:Aspects of this disclosure relate to method of manufacturing a bulk acoustic wave device. The method can include providing a bulk acoustic wave device structure including a first piezoelectric layer and forming a second piezoelectric layer over the first piezoelectric layer by atomic layer deposition. The second piezoelectric layer can have an opposite polarization relative to the first piezoelectric layer.
Bibliography:Application Number: US202217937175