DEVICE FOR CONTROLLING TRAPPED IONS WITH REINFORCED ION TRAP METAL LAYER

A device for controlling trapped ions includes a substrate. A structured first metal layer is disposed over the substrate. The structured first metal layer forms electrodes of an ion trap configured to trap ions in a space above the structured first metal layer. The structured first metal layer is f...

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Bibliographic Details
Main Authors Purwin, Lina, Gabric, Johann, Auchter, Silke Katharina, Dietl, Matthias German, Rössler, Clemens, Zesar, Alexander, Woehlert, Stefan
Format Patent
LanguageEnglish
Published 30.03.2023
Subjects
CALCULATING
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
COMPUTING
COUNTING
GAMMA RAY OR X-RAY MICROSCOPES
IRRADIATION DEVICES
NUCLEAR ENGINEERING
NUCLEAR PHYSICS
PHYSICS
TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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Summary:A device for controlling trapped ions includes a substrate. A structured first metal layer is disposed over the substrate. The structured first metal layer forms electrodes of an ion trap configured to trap ions in a space above the structured first metal layer. The structured first metal layer is formed of a multilayer stack. The multilayer stack includes an electrically conductive layer of a first material and a mechanical stabilization layer of a second material. The second material has an elastic modulus greater than the elastic modulus of the first material and/or the second material has a yield strength greater than the yield strength of the first material.
Bibliography:Application Number: US202217953411