REDUCTION OF BR2 AND CL2 IN SEMICONDUCTOR PROCESSES

One or more embodiments described herein relate to abatement systems for reducing Br2 and Cl2 in semiconductor processes. In embodiments described herein, semiconductor etch processes are performed within process chambers. Thereafter, fluorinated greenhouse gases (F-GHGs), HBr, and Cl2 gases exit th...

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Bibliographic Details
Main Authors L'HEUREUX, James, GOMPEL, Joseph Van
Format Patent
LanguageEnglish
Published 30.03.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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Summary:One or more embodiments described herein relate to abatement systems for reducing Br2 and Cl2 in semiconductor processes. In embodiments described herein, semiconductor etch processes are performed within process chambers. Thereafter, fluorinated greenhouse gases (F-GHGs), HBr, and Cl2 gases exit the process chamber and enter a plasma reactor. Reagent gases are delivered from a reagent gas delivery apparatus to the plasma reactor to mix with the process gases. Radio frequency (RF) power is applied to the plasma reactor, which adds energy and "excites" the gases within the process chamber. When HBr is energized, it forms Br2. Br2 and Cl2 are corrosive and toxic. However, the addition of H2O in the plasma reactor quenches the Br2 and Cl2 emissions, as the H atoms recombine with the Br atoms and the Cl atoms to form HBr and HCl. HBr and HCl are readily water-soluble and removed through a wet scrubber.
Bibliography:Application Number: US202218077087