PHOTORESIST COMPOSITION COMPRISING AMIDE COMPOUND AND PATTERN FORMATION METHODS USING THE SAME

Disclosed herein is a photoresist composition comprising a first polymer comprising an acid labile group; a photoacid generator; and an acid diffusion control agent that comprises a tri-alkyl amide compound having a lipophilicity (log P) value that is greater than 11.

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Bibliographic Details
Main Authors Lee, Won Seok, Lim, Hae-Jin, Choi, Kwang Mo, Kang, Philjae, Yoon, Yoo Jung
Format Patent
LanguageEnglish
Published 30.03.2023
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Summary:Disclosed herein is a photoresist composition comprising a first polymer comprising an acid labile group; a photoacid generator; and an acid diffusion control agent that comprises a tri-alkyl amide compound having a lipophilicity (log P) value that is greater than 11.
Bibliography:Application Number: US202117475436