FERROELECTRIC RANDOM ACCESS MEMORY (FRAM) DEVICES WITH ENHANCED CAPACITOR ARCHITECTURE

Embodiments of the disclosure are directed to advanced integrated circuit structure fabrication and, in particular, to ferroelectric random access memory (FRAM) devices with an enhanced capacitor architecture. Other embodiments may be disclosed or claimed.

Saved in:
Bibliographic Details
Main Authors KABIR, Nafees A, PECK, Jason, HARATIPOUR, Nazila, CHANG, Sou-Chi, ATANASOV, Sarah, SHIVARAMAN, Shriram, AVCI, Uygar E
Format Patent
LanguageEnglish
Published 30.03.2023
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:Embodiments of the disclosure are directed to advanced integrated circuit structure fabrication and, in particular, to ferroelectric random access memory (FRAM) devices with an enhanced capacitor architecture. Other embodiments may be disclosed or claimed.
Bibliography:Application Number: US202117485308