CMOS INTEGRATION OF 2D MATERIAL BY END ETCH

• Main Authors: O'BRIEN, Kevin P, CLENDENNING, Scott B, MAXEY, Kirby, ROY, Anandi, NAYLOR, Carl H, LEE, Sudarat, DOROW, Chelsey, TRONIC, Tristan A, PENUMATCHA, Ashish Verma, AVCI, Uygar E
• Format: Patent
• Language: English
• Published: 30.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a sheet that is a semiconductor. In an embodiment a length dimension of the sheet and a width dimension of the sheet are greater than a thickness dimensi...