CMOS INTEGRATION OF 2D MATERIAL BY END ETCH

Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a sheet that is a semiconductor. In an embodiment a length dimension of the sheet and a width dimension of the sheet are greater than a thickness dimensi...

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Bibliographic Details
Main Authors O'BRIEN, Kevin P, CLENDENNING, Scott B, MAXEY, Kirby, ROY, Anandi, NAYLOR, Carl H, LEE, Sudarat, DOROW, Chelsey, TRONIC, Tristan A, PENUMATCHA, Ashish Verma, AVCI, Uygar E
Format Patent
LanguageEnglish
Published 30.03.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a sheet that is a semiconductor. In an embodiment a length dimension of the sheet and a width dimension of the sheet are greater than a thickness dimension of the sheet. In an embodiment, a gate structure is around the sheet, and a first spacer is adjacent to a first end of the gate structure, and a second spacer adjacent to a second end of the gate structure. In an embodiment, a source contact is around the sheet and adjacent to the first spacer, and a drain contact is around the sheet and adjacent to the second spacer.
Bibliography:Application Number: US202117485202