Method of Forming a Semiconductor Device Including an Absorption Layer

• Main Authors: Piccin, Matteo, Draghici, Mihai, Schulze, Hans-Joachim, Swoboda, Marko David
• Format: Patent
• Language: English
• Published: 23.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of manufacturing a semiconductor device is described. The method includes providing a parent substrate including a substrate portion of a first conductivity type. The method further includes forming an absorption layer in the parent substrate by an ion implantation process of an element through a first surface of the parent substrate. The method further includes forming a semiconductor layer structure on the first surface of the parent substrate. The method further includes splitting the parent substrate along a splitting section through a detachment layer. The detachment layer is arranged between the absorption layer and a second surface of the parent substrate at a vertical distance to the absorption layer.