PHOTOELECTRIC CONVERSION APPARATUS, PHOTOELECTRIC CONVERSION SYSTEM, AND MOVABLE BODY

A photoelectric conversion apparatus comprising an avalanche diode disposed in a semiconductor layer having a first surface and a second surface opposite the first surface. The avalanche diode includes a first semiconductor region of first conductivity type disposed at a first depth and a second sem...

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Bibliographic Details
Main Authors Kanou, Taikan, Iwata, Junji, Morimoto, Kazuhiro
Format Patent
LanguageEnglish
Published 23.03.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A photoelectric conversion apparatus comprising an avalanche diode disposed in a semiconductor layer having a first surface and a second surface opposite the first surface. The avalanche diode includes a first semiconductor region of first conductivity type disposed at a first depth and a second semiconductor region of second conductivity type disposed at a second depth deeper than the first depth with respect to the second surface. An oxide film and a protective film stacked on the oxide film are disposed on the second surface of the semiconductor layer. There is a point at which dsio>(εsio/εprot)×dprot/2 is satisfied, where dsio is a thickness of the oxide film, dprot is a thickness of the protective film, εsio is a relative permittivity of the oxide film, and εprot is a relative permittivity of the protective film.
Bibliography:Application Number: US202217933025